View FGA15N120A_239829.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild's AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A High input impedance CO-PAK, IGBT with FRD : trr = 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G
TO-3P
GCE
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGA15N120AND 1200 20 24 15 45 15 45 200 80 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.63 2.88 40 Units C/W C/W C/W
(c)2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
FGA15N120AND
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 100 V V/C mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125C IC = 24A, VGE = 15V 3.5 ---5.5 2.4 2.9 3.0 7.5 3.2 --V V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1150 120 56 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------90 70 310 60 3.27 0.6 3.68 80 60 310 50 3.41 0.84 4.25 120 9 63 14 ---120 4.9 0.9 5.8 -------180 14 95 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH
VCC = 600 V, IC = 15A, RG = 20, VGE = 15V, Inductive Load, TC = 25C
VCC = 600 V, IC = 15A, RG = 20, VGE = 15V, Inductive Load, TC = 125C
VCE = 600 V, IC = 15A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 15A TC = 125C TC = 25C TC = 125C IF = 15A dI/dt = 200 A/s TC = 25C TC = 125C TC = 25C TC = 125C
Min. ---------
Typ. 1.7 1.8 210 280 27 31 2835 4340
Max. 2.7 -330 -40 -6600 --
Units V ns A nC
(c)2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
FGA15N120AND
120 T C = 25 100 20V 17V 15V 12V
80 Common Emitter VGE = 15V TC = 25 TC = 125
Collector Current, IC [A]
80
60 VGE = 10V 40
Collector Current, IC [A]
10
60
40
20
20
0 0 2 4 6 8
0 0 2 4 6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0 Common Emitter VGE = 15V
30 Vcc = 600V load Current : peak of square wave
24A
Collector-Emitter Voltage, VCE [V]
3.5
3.0 IC = 15A
Load Current [A]
20
10
2.5
2.0 25 50 75 100 125
Duty cycle : 50% Tc = 100 Powe Dissipation = 40W 0 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector-Emitter Voltage, VCE [V]
16
Collector-Emitter Voltage, VCE [V]
16
12
12
8
8
4 IC = 7.5A 0 0 4 8
24A 15A
24A 4 15A IC = 7.5A 0 0 4 8 12 16 20
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGA15N120AND Rev. A
FGA15N120AND
2500 Common Emitter VGE = 0V, f = 1MHz TC = 25 Ciss 1500
2000
100
td(on)
Switching Time [ns]
Capacitance [pF]
tr
1000 Coss 500 Crss
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 TC = 125 10 0 10 20 30 40 50 60 70
0 1 10
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Loss [mJ]
Switching Time [ns]
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 TC = 125
10 td(off)
Common Emitter VCC = 600V, VGE = 15V IC = 15A T C = 25 T C = 125 Eon
100 tf
1
Eoff
10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG []
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter VGE = 15V, RG = 20 TC = 25 TC = 125 Common Emitter VGE = 15V, RG = 20 T C = 25 T C = 125
td(off)
Switching Time [ns]
100 td(on)
Switching Time [ns]
100 tf
tr
5
10
15
20
25
30
5
10
15
20
25
30
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FGA15N120AND Rev. A
FGA15N120AND
16 Common Emitter VGE = 15V, RG = 20 TC = 25 TC = 125 14 Eon Common Emitter RL = 40 TC = 25 600V 400V 8 6 4 2 0 5 10 15 20 25 30 0 20 40 60 80 100 120 Vcc = 200V
Gate-Emitter Voltage, VGE [V]
10
12 10
Switching Loss [mJ]
1
Eoff
0.1
Collector Current, IC [A]
Gate Charge, Qg [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 100 Ic MAX (Pulsed) Ic MAX (Continuous) 50s 100s 1ms DC Operation 1
Collector Current, Ic [A]
10
Collector Current, IC [A]
10
Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
o
0.01
1 1 10
Safe Operating Area VGE = 15V, T C = 125 100 1000
Collector - Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A
FGA15N120AND
50
30 di/dt = 200A/s
Forward Current , IF [A]
10
Reverse Recovery Currnet , Irr [A]
25
20
TJ = 125 C TJ = 25 C
o
o
15
di/dt = 100A/s
1
10
5
TC = 125 TC = 25 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4
0 5 10 15 20 25
Forward Voltage , V F [V]
Forward Current , I F [A]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
7000
400
Stored Recovery Charge , Qrr [nC]
di/dt = 200A/s 5000 4000 3000 2000 1000 0 5 10 15 20 25
Reverse Recovery Time , rr [ns] t
6000
300
di/dt = 100A/s
di/dt = 100A/s
200 di/dt = 200A/s 100
0 5 10 15 20 25
Forward Current , IF [A]
Forward Current , I F [A]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
FGA15N120AND
Package Dimension
TO-3P (FS PKG CODE )
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2003 Fairchild Semiconductor Corporation FGA15N120AND Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2003 Fairchild Semiconductor Corporation
Rev. I5

▲Up To Search▲

Price & Availability of FGA15N120A

	To Download FGA15N120A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .